ACST8-8C

2/8

Symbol

Parameter

Value

Unit

Repetitive peak off-state voltage

800

V

RMS on-state current full cycle sine wave 50 to 60 Hz

Tcase = 90°C

8

A

Non repetitive surge peak on-state current

Tj initial = 25°C, full cycle sine wave

tp = 20ms

80

A

tp = 16.7ms

85

A

I

Thermal constraint for fuse selection

tp = 10ms

35

A

dI/dt

Non repetitive on-state current critical rate of rise

Rate period > 1mn

100

A/

µs

Non repetitive line peak pulse voltage

note 1

2kV

Tstg

Storage temperature range

- 40 to + 150

°C

Tj

Operating junction temperature range

- 40 to + 125

°C

Tl

Maximum lead soldering temperature during 10s

260

°C

Note 1: according to test described by IEC61000-4-5 standard & Figure A.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

Average gate power dissipation

0.1

W

Peak gate power dissipation (tp = 20µs)

10

W

Peak gate current (tp = 20µs)

1

A

GATE CHARACTERISTICS (maximum values)

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

60

°C/W

Rth (j-c)

Junction to case for full cycle sine wave conduction

3.5

°C/W

THERMAL RESISTANCE

Parameter Symbol

Parameter description

Gate triggering current

Gate triggering voltage

Non triggering voltage

Holding current

Latching current

On state voltage

On state characteristic threshold voltage

On state characteristic dynamic resistance

Forward or reverse leakage current

dV/dt

Static pin OUT voltage rise

(dI/dt)c

Turn off current rate of decay

Avalanche voltage at turn off

PARAMETER DESCRIPTION