ACST8-8C

6/8

0.0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

Tamb(°C)

α=180°

Printed circuit board FR4

Natural convection

IT(RMS)(A)

Fig. 2-2: RMS on-state current versus ambient

temperature.

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

Zth(j-a)

Zth(j-c)

K = [Zth/Rth]

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

1

10

100

01

234

56

VTM(V)

Tj=25°C

Tj=125°C

Tj max. :

Vto = 0.95 V

Rd = 50 m

Ω

Iout(A)

Fig. 4: On-state characteristics (maximum val-

ues).

0

10

20

30

40

50

60

70

80

90

1

10

100

1000

Number of cycles

Non repetitive

Tj initial=25°C

Repetitive

Tc=90°C

t=20ms

ITSM(A)

Fig. 5: Surge peak on-state current versus number

of cycles.

10

100

1000

0.01

0.10

1.00

10.00

tp(ms)

Tj initial=25°C

dI/dt limitation:

100A/µs

ITSM

I²t

ITSM(A), I t(A s)

22

Fig. 6: Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp < 10ms, and

corresponding value of I

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 -30 -20 -10

0

10

20 30

40

50

60 70

80

90 100 110 120 130

Tj(°C)

IGT & IH

IL

IGT, IH, IL[Tj]/IGT, IH, IL[Tj=25°C]

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus junc-

tion temperature (typical values).