HT8KB6

Datasheet

l

lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input capacitance

Ciss

VGS = 0V

-

530

-

pF

Output capacitance

Coss

VDS = 20V

-

260

-

Reverse transfer capacitance

Crss

f = 1MHz

-

23

-

Turn - on delay time

td(on)*5

VDD ⋍ 20V,VGS = 10V

-

8.5

-

ns

Rise time

tr*5

ID = 4.0A

-

6.2

-

Turn - off delay time

td(off)*5

RL = 5.0Ω

-

21.0

-

Fall time

tf*5

RG = 10Ω

-

4.5

-

l

lGate charge characteristics (Ta = 25°C) <Tr1 and Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Total gate charge

Qg*5

VDD ⋍ 20V

ID = 8.0A

VGS = 10V

-

10.6

-

nC

VGS = 4.5V

-

5.0

-

Gate - Source charge

Qgs*5

-

1.9

-

Gate - Drain charge

Qgd*5

-

1.8

-

l

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

<Tr1 and Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Continuous forward current

IS

Ta = 25℃

-

-

1.67

A

Pulse forward current

ISP*2

-

-

32

Forward voltage

VSD*5

VGS = 0V, IS = 1.67A

-

-

1.2

V

Reverse recovery time

trr*5

IS = 8.0A, VGS = 0V

di/dt = 100A/μs

-

27

-

ns

Reverse recovery charge

Qrr*5

-

18

-

nC

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