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ISC015N03LF2S 数据表(PDF) 4 Page - Infineon Technologies AG |
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ISC015N03LF2S 数据表(HTML) 4 Page - Infineon Technologies AG |
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4 / 14 page ![]() StrongIRFET™ 2 Power‑Transistor, 30 V ISC015N03LF2S Public Datasheet 4 Revision 1.1 https://www.infineon.com 2024‑11‑25 2 Thermal characteristics Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Thermal resistance, junction ‑ case R ‑ ‑ 1.2 °C/W ‑ Thermal resistance, junction ‑ case, top R ‑ ‑ 20 °C/W Thermal resistance, junction ‑ ambient, minimal footprint 5) R ‑ ‑ 50 °C/W Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 μm thick) copper area for drain connection. PCB 5) 2 is vertical in still air. thJC thJC thJA |
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