6N60L-ATA3-R datasheet(3/7 Pages) UTC

部件名	6N60L-ATA3-R

功能描述	6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

PDF	7 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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6N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-117.A

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 6.2 A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

6.2

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

24.8

Reverse Recovery Time

tRR

290

Reverse Recovery Charge

QRR

VGS = 0 V, IS = 6.2 A,

dIF/dt = 100 A/µs (Note 4)

2.35

µC

Notes: 1. Repetitive Rating : Pulse width limited by TJ

2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.2A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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