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STTH5L06 数据表(PDF) 5 Page - STMicroelectronics |
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STTH5L06 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() STTH5L06 Characteristics 5/10 Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 V (V) FP dI /dt(A/µs) F I=I T =125°C F F(AV) j 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 t (ns) fr dI /dt(A/µs) F I=I T =125°C F F(AV) j V =1.1 x V max. FR F Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU = 35 µm) (DPAK) Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (DO-201AD) 1 10 100 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC j 0 2 4 6 8 1012141618 20 0 10 20 30 40 50 60 70 80 R (°C/W) th(j-a) S (cm²) CU 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R (°C/W) th(j-a) DO-201AD S (cm²) CU |
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