2

DN3545

Notes:

1. I

2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Thermal Characteristics

Package

I

D

I

D

(pulsed)

Power Dissipation

@T

θ

jc

θ

ja

I

DR

1

I

DRM

T0-92

136mA

550mA

0.74W

125

170

136mA

550mA

TO-243AA

200mA

550mA

15

200mA

550mA

Symbol

Parameter

Min

Typ

Max

Units

Conditions

BV

DSX

Drain-to-source breakdown voltage

450

-

-

V

V

V

GS(OFF)

Gate-to-source OFF voltage

-1.5

-

-3.5

V

V

ΔV

GS(OFF)

Change in V

-

-

4.5

I

GSS

Gate body leakage current

-

-

100

nA

V

I

D(OFF)

Drain-to-source leakage current

-

-

1.0

µA

V

-

-

1.0

mA

V

T

I

DSS

Saturated drain-to-source current

200

-

-

mA

V

R

DS(ON)

Static drain-to-source

on-state resistance

--

20

Ω

V

ΔR

DS(ON)

Change in R

-

-

1.1

G

FS

Forward transductance

150

-

-

m

I

C

ISS

Input capacitance

-

-

360

pF

V

C

OSS

Common source output capacitance

-

-

40

C

RSS

Reverse transfer capacitance

-

-

15

t

d(ON)

Turn-ON delay time

-

-

20

ns

V

R

t

r

Rise time

-

-

30

t

d(OFF)

Turn-OFF delay time

-

-

30

t

f

Fall time

-

-

40

V

SD

Diode forward voltage drop

-

-

1.8

V

V

t

rr

Reverse recovery time

-

800

-

ns

V