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IRFP054VPBF 数据表(PDF) 2 Page - International Rectifier |
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IRFP054VPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFP054VPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 90A, VGS = 0V trr Reverse Recovery Time ––– 78 120 ns TJ = 25°C, IF = 64A Qrr Reverse Recovery Charge ––– 250 380 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 93 360 A Starting TJ = 25°C, L = 54µH RG = 25Ω, IAS = 90A, VGS=10V (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: ISD ≤ 90A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . This is tested with same test conditions as the existing data sheet Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 9.0 m Ω VGS = 10V, ID = 54A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 61 ––– ––– S VDS = 25V, ID = 54A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 170 ID = 64A Qgs Gate-to-Source Charge ––– ––– 39 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 59 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 22 ––– VDD = 30V tr Rise Time ––– 160 ––– ID = 64A td(off) Turn-Off Delay Time ––– 77 ––– RG = 6.2Ω tf Fall Time ––– 110 ––– VGS = 10V, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 4080 ––– VGS = 0V Coss Output Capacitance ––– 840 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 180 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1080
220 mJ IAS = 90A, L = 54µH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current |
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