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SC2621 数据表(PDF) 7 Page - Semtech Corporation

部件名 SC2621
功能描述  500kHz Voltage Mode PWM Controller With Linear Power Regulator
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SEMTECH [Semtech Corporation]
网页  http://www.semtech.com
标志 SEMTECH - Semtech Corporation

SC2621 数据表(HTML) 7 Page - Semtech Corporation

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 2003 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC2621
Applications Information (Cont.)
150
175
200
225
250
275
300
325
350
0
100
200
300
400
500
600
Rset (k-ohm)
150
175
200
225
250
275
300
325
350
0
100
200
300
400
500
600
Rset (k-ohm)
Fig. 2. Pull down resistor for current limit setting
The manufacture data and bench tested results show
that, for low Rdson MOSFETs run at applied load current,
the optimum gate drive voltage is around 8.2V, where
the total power losses of power MOSFETs are minimized.
COMPONENT SELECTION
COMPONENT SELECTION
COMPONENT SELECTION
COMPONENT SELECTION
COMPONENT SELECTION
General design guideline of switching power supplies can
be applied to the component selection for the SC2621.
Induct
Induct
Induct
Induct
Inductor and MOSFET
or and MOSFET
or and MOSFET
or and MOSFET
or and MOSFETsssss
The selection of inductor and MOSFETs should meet ther-
mal requirement because they are power loss dominant
components. Pick an inductor with as high inductance
as possible without adding extra cost and size. The higher
inductance, the lower ripple current, the smaller core loss
and the higher efficiency will be. However, too high in-
ductance slows down output transient response. It is rec-
ommended to choose the inductance that gives the in-
ductor ripple current to be approximate 20% of maxi-
mum load current. So choose inductor value from:
)
1
(
5
IN
O
O
osc
O
V
V
V
f
I
L
-
×
×
×
=
The MOSFETs are selected from their Rdson, gate charge,
and package. The SC2621 provides 1.5A gate drive cur-
rent. To drive a 50nC gate charge MOSFET gives 50nC/
1.5A=33ns switching time. The switching time ts contrib-
utes to the top MOSFET switching loss:
OSC
S
IN
O
S
f
t
V
I
P
×
×
×
=
There is no significant switching loss for the bottom
MOSFET because of its zero voltage switching. The con-
duction losses of the top and bottom MOSFETs are given
by:
D
R
I
P
dson
O
TOP
C
×
×
=
2
_
)
1
(
2
_
D
R
I
P
dson
O
BOT
C
-
×
×
=
If the requirement of total power losses for each MOSFET
is given, the above equations can be used to calculate
the values of Rdson and gate charge can be calculated
using above equations, then the devices can be deter-
mined accordingly. The solution should ensure the
MOSFET is within its maximum junction temperature at
highest ambient temperature.
Output Capacitor
Output Capacitor
Output Capacitor
Output Capacitor
Output Capacitor
The output capacitors should be selected to meet both
output ripple and transient response criteria. The output
capacitor ESR causes output ripple VRIPPLE during the
inductor ripple current flowing in. To meet output ripple
criteria, the ESR value should be:
)
1
(
IN
O
O
RIPPLE
OSC
ESR
V
V
V
V
f
L
R
-
×
×
×
<
The output capacitor ESR also causes output voltage tran-
sient VT during a transient load current IT flowing in. To
meet output transient criteria, the ESR value should be:
T
T
ESR
I
V
R
<
To meet both criteria, the smaller one of above two ESRs
is required.
The output capacitor value also contributes to load tran-
sient response. Based on a worst case where the induc-
tor energy 100% dumps to the output capacitor during
the load transient, the capacitance then can be calcu-
lated by:
2
2
T
T
V
I
L
C
×
>



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