2

TN2425

Symbol

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

250

-

-

V

V

V

GS(th)

Gate threshold voltage

0.8

-

2.0

V

V

ΔV

GS(th)

V

-

-

-5.0

I

GSS

Gate body leakage current

-

-

100

nA

V

I

DSS

Zero gate voltage drain current

-

-

10

µA

V

-

-

1.0

mA

V

V

I

D(ON)

ON-state drain current

0.8

-

-

A

V

1.5

-

-

V

R

DS(ON)

Static drain-to-source ON-state

resistance

-

-

6.0

Ω

V

-

-

5.0

V

-

-

3.5

V

ΔR

DS(ON)

Change in R

-

-

1.7

G

FS

Forward transconductance

500

-

-

mmho

V

C

ISS

Input capacitance

-

105

200

pF

V

C

OSS

Common source output capacitance

-

25

100

C

RSS

Reverse transfer capacitance

-

7

40

t

d(ON)

Turn-ON delay time

-

5

15

ns

V

I

R

t

r

Rise time

-

10

25

t

d(OFF)

Turn-OFF delay time

-

25

35

t

f

Fall time

-

5

15

V

SD

Diode forward voltage drop

-

-

1.5

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

2.All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

Pulse

Generator

D.U.T

OUTPUT

10V

0V

0V

V

DD

t

d(OFF)

Input

Output

t

r

t

f

t

d(ON)

t

(ON)

t

(OFF)

10%

90%

90%

10%

90%

10%

Input

Thermal Characteristics

Package

I

†

ID (pulsed)

Power Dissipation

@T

θ

I

DR

†

I

DRM

TO-243AA

480mA

1.9A

15

480mA

1.9A

Notes:

† ID (continuous) is limited by max rated T

‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.