2

TN2524

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

240

-

-

V

V

V

GS(th)

Gate threshold voltage

0.6

-

2.0

V

V

ΔV

GS(th)

Change in V

-

-

-5.0

I

GSS

Gate body leakage

-

-

100

nA

V

I

DSS

Zero gate voltage drain current

-

-

10

µA

V

-

-

1.0

mA

V

ing, T

I

D(ON)

ON-state drain current

0.5

1.9

-

A

V

1.0

2.8

-

V

R

DS(ON)

Static drain-to-source ON-state resistance

-

4.0

6.0

Ω

V

-

4.0

6.0

V

ΔR

DS(ON)

Change in R

-

-

1.4

G

FS

Forward transductance

300

600

-

mmho

V

C

ISS

Input capacitance

-

65

125

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

35

70

C

RSS

Reverse transfer capacitance

-

10

25

t

d(ON)

Turn-ON delay time

-

-

10

ns

V

I

R

t

r

Rise time

-

-

10

t

d(OFF)

Turn-OFF delay time

-

-

20

t

f

Fall time

-

-

20

V

SD

Diode forward voltage drop

-

-

1.8

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

(2) All A.C. parameters sample tested.

Notes:

* I

† Mounted on FR5 board, 25mm x 25mm x 1.57mm.

Thermal Characteristics

Package

I

D

(A)

I

D

(pulsed)

(A)

Power Dissipation

@T

(W)

θ

jc

θ

ja

I

DR

*

(A)

I

DRM

(A)

TO-243AA (SOT-89)

0.36

2.0

15

0.36

2.0

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

0V

0V