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TP2510 数据表(PDF) 2 Page - Supertex, Inc

部件名 TP2510
功能描述  Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
PDF  5 Pages
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制造商  SUTEX [Supertex, Inc]
网页  http://www.supertex.com
标志 SUTEX - Supertex, Inc

TP2510 数据表(HTML) 2 Page - Supertex, Inc

  TP2510_07 Datasheet HTML 1Page - Supertex, Inc TP2510_07 Datasheet HTML 2Page - Supertex, Inc TP2510_07 Datasheet HTML 3Page - Supertex, Inc TP2510_07 Datasheet HTML 4Page - Supertex, Inc TP2510_07 Datasheet HTML 5Page - Supertex, Inc  
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TP2510
Ordering Information
Device
Package Options
BV
DSS/BVDGS
(V)
R
DS(ON)
(Ω)
V
GS(TH)
(max)
(V)
I
D(ON)
(min)
(A)
TO-243AA (SOT-89)
Die*
TP2510
TP2510N8-G
TP2510ND
-100
3.5
-2.4
-1.5
* MIL visual screening available.
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55°C to +150°C
Soldering temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.
Symbol
Parameter
Min
Typ
Max
Units
Conditions
Electrical Characteristics (@25°C unless otherwise specified )
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
BV
DSS
Drain-to-source breakdown voltage
-100
-
-
V
V
GS = 0V, ID = -2.0mA
V
GS(th)
Gate threshold voltage
-1.0
-
-2.4
V
V
GS = VDS, ID= -1.0mA
∆V
GS(th)
Change in V
GS(th) with temperature
-
-
5.0
mV/OCV
GS = VDS, ID= -1.0mA
I
GSS
Gate body leakage
-
-
-100
nA
V
GS = ± 20V, VDS = 0V
I
DSS
Zero gate voltage drain current
-
--10
μA
V
GS = 0V, VDS = Max Rating
-
-1.0
mA
V
GS = 0V, VDS = 0.8 Max Rating,
T
A = 125°C
I
D(ON)
ON-state drain current
-0.4
-0.6
-
A
V
GS = -5.0V, VDS = -25V
-1.5
-2.5
-
V
GS = -10V, VDS = -25V
R
DS(ON)
Static drain-to-source ON-State
Resistance
-
5.0
7.0
Ω
V
GS = -5.0V, ID = -250mA
2.0
3.5
V
GS = -10V, ID = -0.75A
∆R
DS(ON)
Change in R
DS(ON) with temperature
-
-
1.7
%/OCV
GS = -10V, ID = -0.75A
G
FS
Forward transconductance
300
360
-
mmho
V
DS = -25V, ID = -0.75A
C
ISS
Input capacitance
-
80
125
pF
V
GS = 0V,
V
DS = -25V,
f = 1.0 MHz
C
OSS
Common source output capacitance
-
40
70
C
RSS
Reverse transfer capacitance
-
10
25
t
d(ON)
Turn-ON delay time
-
-
10
ns
V
DD = -25V,
I
D = -1.0A,
R
GEN = 25Ω
t
r
Rise time
-
-
15
t
d(OFF)
Turn-OFF delay time
-
-
20
t
f
Fall time
-
-
15
V
SD
Diode forward voltage drop
-
-
-1.8
V
V
GS = 0V, ISD = -1.0A
t
rr
Reverse recovery time
-
300
-
ns
V
GS = 0V, ISD = -1.0A
Absolute Maximum Ratings
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
TO-243AA (SOT-89)
(Top View)
GATE
DRAIN SINK
DRAIN
Product Marking
TP5AW
W = Code for Week Sealed
= “Green” Packaging
TO-243AA (SOT-89) N8



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