2

TP2635/TP2640

Symbol

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source break-

down voltage

TP2640

-400

--

V

V

TP2635

-350

V

GS(th)

Gate threshold voltage

-0.8

-

-2.0

V

V

ΔV

GS(th)

Change in V

-

-

5

I

GSS

Gate body leakage

-

-100

nA

V

I

DSS

Zero gate voltage drain current

-

-

-1.0

µA

V

-10.0

µA

V

-1.0

mA

V

V

I

D(ON)

ON-state drain current

0.7

-

-

A

V

R

DS(ON)

Static drain-to-source ON-state

resistance

-

12

15

Ω

V

11

15

V

11

15

V

ΔR

DS(ON)

Change in R

-

-

0.75

G

FS

Forward transconductance

200

-

-

m

V

C

ISS

Input capacitance

-

-

300

pF

V

C

OSS

Common source output capacitance

-

-

50

C

RSS

Reverse transfer capacitance

-

-

12

t

d(ON)

Turn-ON delay time

-

-

10

ns

V

R

t

r

Rise time

-

-

15

t

d(OFF)

Turn-OFF delay time

-

-

60

t

f

Fall time

-

-

40

V

SD

Diode forward voltage drop

-

-

-1.8

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

N- Channel Switching Waveforms and Test Circuit

Thermal Characteristics

Package

I

1

I

Power Dissipation

@T

Θ

Θ

I

DR

1

I

DRM

SO-8

-210mA

-1.25A

24

210mA

-1.25A

TO-92

-180mA

-0.8A

1.0W

125

170

-180mA

-0.8A

Notes:

1. I

2. Mounted on FR4 board, 25mm x 25mm x 1.57mm

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V