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SC1112STRT 数据表(PDF) 3 Page - Semtech Corporation |
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SC1112STRT 数据表(HTML) 3 Page - Semtech Corporation |
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3 / 23 page ![]() 3 2006 Semtech Corp. www.semtech.com POWER MANAGEMENT SC1112 r e t e m a r a Pl o b m y Ss n o i t i d n o Cn i Mp y Tx a Ms t i n U ) . t n o C ( s n o i t c e S r a e n i L T T V e g a tl o V t u p t u O) A 2 1 1 1 C S ( T T V 2 . 1 I O W O L = L E S T T V , A 2 o t 0 =6 7 1 . 10 0 2 . 14 2 2 . 1V ) 2 1 1 1 C S ( T T V 5 2 . 1 I O W O L = L E S T T V , A 2 o t 0 =5 2 2 . 10 5 2 . 15 7 2 . 1 T T V 5 . 1 I O H G I H = L E S T T V , A 2 o t 0 =0 7 4 . 10 0 5 . 10 3 5 . 1V P G A e g a tl o V t u p t u OP G A 5 . 1 I O W O L = L E S P G A , A 2 o t 0 =0 7 4 . 10 0 5 . 10 3 5 . 1V P G A 3 . 3 I O H G I H = L E S P G A , A 2 o t 0 =4 3 2 . 30 0 3 . 3V J D A e g a tl o V t u p t u OJ D AI O A 2 o t 0 =% 2 -) B R / A R + 1 ( * 2 . 1% 2 +V t n e r r u C s a i B N E S T T V ) 2 1 1 1 C S ( s a i b I N E S T T V 0 90 2 10 4 1A µ t n e r r u C s a i B N E S T T V ) A 2 1 1 1 C S ( s a i b I N E S T T V 15 A µ t n e r r u C s a i B N E S P G As a i b I N E S P G A 0 1 10 5 10 7 1A µ t n e r r u C s a i B N E S J D As a i b I N E S J D A 15 A µ t n e r r u C e t a G T T Ve c r u o s I e t a g T T V V 0 . 3 = e t a g V , V 5 7 . 4 = Y B T S V 50 0 5A µ k n i s I e t a g T T V 0 0 5A µ t n e r r u C e t a G P G Ae c r u o s I e t a g P G A V 0 . 3 = e t a g V , V 5 7 . 4 = Y B T S V 50 0 5A µ k n i s I e t a g P G A 0 0 5A µ t n e r r u C e t a G J D Ae c r u o s I e t a g J D A V 0 . 3 = e t a g V , V 5 7 . 4 = Y B T S V 50 0 5A µ k n i s I e t a g J D A 0 0 5A µ n o it a l u g e R d a o LD A O L G E R I , V 0 3 . 3 = N I T T V O A 2 o t 0 =3 . 0% n o it a l u g e R e n i LE N I L G E R , V 7 4 . 3 o t V 3 1 . 3 = N I T T V A 2 = o I 3 . 0% ) L O A ( n i a G ) 2 ( N I A G O D L E T A G o t t u p t u O S O D L0 5B d Electrical Characteristics (Cont.) Unless specified: 5VSTBY=4.75V to 5.25V; VTTIN=3.3V; T A = 25°C Notes: (1) All electrical characteristics are for the application circuit on page 19. (2) Guaranteed by design (3) Tracking Difference is defined as the delta between 3.3V Vin and the VTT, AGP, ADJ output voltages during the linear ramp up until regulation is achieved. The Tracking Voltage difference might vary depending on MOSFETs Rdson, and Load Conditions. (4) During power up, an internal short circuit glitch timer will start once the VTT Input Voltage exceeds the VTTIN TH (1.5V). During the glitch timer immunity time, determined by the Delay capacitor (Delay time is approximately equal to (Cdelay*SCTH)/ISC), the short circuit protection is disabled to allow VTT output to rise above the trip threshold (0.7V). If the VTT output has not risen above the trip threshold after the immunity time has elapsed, the VTT output is latched off and will only be enabled again if either the VTT input voltage or the 5VSTBY is cycled. (5) PWRGD pin is kept low during the power up, until the VTT output has reached its PG td1.2 or PGtd1.5 level. At that time the PWRGD source current I PG (20uA) is enabled and will start charging the external PWRGD delay capacitor connected to the DELAY pin. Once the capacitor is charged above the PG Delay_TH (1.5V), the PWRGD pin is released from ground. |
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