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BCR30AM 数据表(PDF) 2 Page - Powerex Power Semiconductors |
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BCR30AM 数据表(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page ![]() Absolute Maximum Ratings, Ta = 25 °C unless otherwise specified Ratings Symbol BCR30AM-8 BCR30AM-12 Units On-state Current, Tc = 75°C IT(RMS) 30 30 Amperes Repetitive Peak Off-state Voltage (Gate Open) VDRM 400 600 Volts Non-repetitive Peak Off-state Voltage (Gate Open) VDSM 500 720 Volts Non-repetitive Peak On-state Voltage, One Cycle (60 Hz) ITSM 300 300 Amperes I2t for Fusing, t = 8.3 msec I2t 378 378 A2sec Peak Gate Power Dissipation, 20 sec PGM 5 5 Watts Average Gate Power Dissipation PG(avg) 0.5 0.5 Watts Peak Gate Current IGM 2 2 Amperes Peak Gate Voltage VGM 10 10 Volts Storage Temperature Tstg -40 to 125 -40 to 125 °C Operating Temperature Tj -40 to 125 -40 to 125 °C Weight – 4.8 4.8 Grams Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified Test Conditions (Trigger Mode) BCR30GM Characteristics Symbol VD RL RG Tj Min. Typ. Max. Units Gate Parameters DC Gate Trigger Current MT2+ Gate+ IFGT I 6V 6 330 25°C – – 50 mA MT2+ Gate– IRGT I 6V 6 330 25°C – – 50 mA MT2– Gate– IRGT III 6V 6 330 25°C – – 50 mA DC Gate Trigger Voltage MT2+ Gate+ VFGT I 6V 6 330 25°C – – 2.5 Volts MT2+ Gate– VRGT I 6V 6 330 25°C – – 2.5 Volts MT2– Gate– VRGT III 6V 6 330 25°C – – 2.5 Volts DC Gate Non-trigger Voltage All VGD 1/2 VDRM – – 125°C 0.2 – – Volts Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction-to-case Rth(c-f) – – – 1.2 °C/W Voltage – Blocking State IDRM Gate Open Circuited, – – 3 mA Repetitive Off-state Current VD = VDRM, Tj = 125°C Current – Conducting State VTM Tc = 25°C, – – 1.6 Volts Peak On-state Voltage ITM = 45A Critical Rate-of-Rise of Commutating (dv/dt)c – – – – V/ s Off-state Voltage (Commutating dv/dt) v (Switching) Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 BCR30AM Triac 30 Ampere/400-600 Volts T-88 |
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