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BCR3AS 数据表(PDF) 3 Page - Powerex Power Semiconductors

部件名 BCR3AS
功能描述  LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

BCR3AS 数据表(HTML) 3 Page - Powerex Power Semiconductors

  BCR3AS Datasheet HTML 1Page - Powerex Power Semiconductors BCR3AS Datasheet HTML 2Page - Powerex Power Semiconductors BCR3AS Datasheet HTML 3Page - Powerex Power Semiconductors BCR3AS Datasheet HTML 4Page - Powerex Power Semiconductors BCR3AS Datasheet HTML 5Page - Powerex Power Semiconductors  
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Feb.1999
100
23
100
57 101 23 5 7 102 23 5 7 103
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
VGD = 0.2V
PG(AV) = 0.3W
PGM = 3W
IGM =
0.5A
IFGT I, IRGT III
IRGT I
23
10–1
57 100 23 5 7 101 23 5 7 102
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
TYPICAL EXAMPLE
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IFGT I, IRGT I
IRGT III
TYPICAL EXAMPLE
10
8
6
4
2
0
5
0
123
4
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
4.0
0
0.5
1.5
2.5
3.5
40
80
140
1.0
2.0
3.0
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE



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