Characteristics

DA108S1 / DA112S1

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1

Characteristics

Note:

1

The surge is repeated after the device returns to ambient temperature

1.

Table 1.

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage (for one single diode)

200

V

8/20 µs

100

A

P

Power dissipation

0.73

W

Storage temperature range

-55 to + 150

°C

Maximum operating junction temperature

150

°C

Maximum lead temperature for soldering during 10 s.

260

°C

Table 2.

Thermal resistances

Symbol

Parameter

Value

Unit

Junction to ambient

170

°C/W

Table 3.

Symbol

Parameter

Max.

Unit

Peak forward voltage

DA108S1

9

V

DA112S1

12

Forward voltage

1.2

V

Reverse leakage current

2

µA