TDA1175P datasheet(3/13 Pages) STMICROELECTRONICS

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TDA1175P

ELECTRICAL CHARACTERISTICS

(Tamb = 25°C, unless otherwise specified)

Table 3. DC CHARACTERISTICS

(Refer to the test circuits, VS = 35V)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Fig.

Pin 2 Quiescent Current

I3 = 0

714

Pin 7 Quiescent Current

I6 = 0

817

–I11

Oscillator Bias Current

V11 = 1V

0.1

µA4

–I14

Amplifier Input Bias Current

V14 = 1V

110

µA5

–I16

Ramp Generator Bias Current

V16 = 0

0.02

0.3

µA4

–I16

Ramp Generator Current

I9 = 20µA, V16 = 0

18.5

21.5

µA5

Ramp Generator Non-linearity

∆V16 = 0 to 12V, I9 = 20µA

0.2

Supply Voltage Range

Pin 1 Saturation Voltage to

Ground

I1 = 1mA

114

Pin 3 Saturation Voltage to

Ground

I3 = 10mA

1.5

2.5

Qiuescent output Voltage

Vs = 10V, R1 = 1kΩ, R2 = 1kΩ

4.1

4.4

4.7

Vs = 35V, R1 = 3kΩ, R2 = 1kΩ

8.2

8.8

9.4

V6L

Output Saturation Voltage to

Ground

– I6 = 0.1A

0.9

1.2

– I6 = 0.8A

1.8

2.2

V6H

Output Saturation Voltage to

Supply

I6 = 0.1A

1.4

2.1

I6 = 0.8A

2.8

3.1

Regulated Voltage at Pin 8

6.5

6.7

6.9

Regulated Voltage at Pin 9

I9 = 20µA

6.6

6.8

Regulated Voltage Drift with

Supply Voltage

∆Vs = 10 to 35V

mV/V

V14

Amplifier Input Reference

Voltage

V10 ≤ 0.4V

2.20

2.27

2.35

I16

∆

I16

----------

∆

-------------

∆

-------------

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