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SC488 数据表(PDF) 14 Page - Semtech Corporation

部件名 SC488
功能描述  Complete DDR1/2/3 Memory Power Supply
PDF  24 Pages
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制造商  SEMTECH [Semtech Corporation]
网页  http://www.semtech.com
标志 SEMTECH - Semtech Corporation

SC488 数据表(HTML) 14 Page - Semtech Corporation

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© 2006 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC488
For stability, place a 10Ω/1μF series combination from REF
to VSSA. If REF load capacitance exceeds 1μF, place at
least 10Ω’s in series with the load capacitance to prevent
instability. It is possible to use only one 10Ω resistor, by
connecting the load capacitors in parallel with the 1μF,
and connecting the load REF to the capacitor side of the
10Ω resistor. (See the Typical Application Circuit on Page
1.) Note that this resistor creates an error term when REF
has a DC load. In most applications this is not a concern
since the DC load on REF is negligible.
Design Procedure
Prior to designing a switching output and making com-
ponent selections, it is necessary to determine the input
voltage range and output voltage specifications. To dem-
onstrate the procedure, the output for the schematic in
Figure 7 on page 19 will be designed.
The maximum input voltage (V
BAT(MAX)) is determined by the
highest AC adaptor voltage. The minimum input voltage
(V
BAT(MIN)) is determined by the lowest battery voltage af-
ter accounting for voltage drops due to connectors, fuses
and battery selector switches. For the purposes of this
design example we will use a VBAT range of 8V to 20V to
design VDDQ.
Four parameters are needed for the design:
Nominal output voltage, V
OUT.
We will use 1.8V with
internal feedback resistors (FB pin tied to VCCA).
Static (or DC) tolerance, TOL
ST (we will use +/-2%).
Transient tolerance, TOL
TR and size of transient (we
will use +/-8% for a 10A to 5A load release for this
demonstration).
Maximum output current, I
OUT (we will design for 10A).
Switching frequency determines the trade-off between
size and efficiency. Increased frequency increases the
switching losses in the MOSFETs, and losses are a func-
tion of VBAT2. Knowing the maximum input voltage and
budget for MOSFET switches usually dictates where the
design ends up. The default R
tON values of 1MΩ and
715kΩ are suggested only as a starting point.
The first thing to do is to calculate the on-time, t
ON, at
V
BAT(MIN) and VBAT(MAX), since this depends only upon VBAT, VOUT
and Rt
ON.
1.
2.
3.
4.
s
9
10
50
)
MIN
(
BAT
V
OUT
V
3
10
37
tON
R
12
10
3.3
N)
ON_VBAT(MI
t
and,
s
9
10
50
)
MAX
(
BAT
V
OUT
V
3
10
37
tON
R
12
10
3.3
X)
ON_VBAT(MA
t
From these values of t
ON we can calculate the nominal
switching frequency as follows:
Hz
N)
ON_VBAT(MI
t
BAT(MIN)
V
OUT
V
(MIN)
SW_VBAT
f
and,
Hz
X)
ON_VBAT(MA
t
BAT(MAX)
V
OUT
V
(MAX)
SW_VBAT
f
t
ON is generated by a one-shot comparator that samples
V
BAT via RtON, converting this to a current. This current is
used to charge an internal 3.3pF capacitor to V
OUT. The
equations above reflect this along with any internal com-
ponents or delays that influence t
ON. For our example we
select R
tON = 1MΩ:
t
ON_VBAT(MIN) = 820ns and, tON_VBAT(MAX) = 358ns
f
SW_VBAT(MIN) = 274kHz and fSW_VBAT(MAX) = 251kHz
Now that we know t
ON we can calculate suitable values for
the inductor. To do this we select an acceptable inductor
ripple current. The calculations below assume 50% of I
OUT
which will give us a starting place.
H
OUT
I
0.5
(MIN)
ON_VBAT
t
OUT
V
BAT(MIN)
V
(MIN)
VBAT
L
and,
H
OUT
I
0.5
X)
ON_VBAT(MA
t
OUT
V
BAT(MAX)
V
(MAX)
VBAT
L
For our example,
L
VBAT(MIN) = 1.02μH and LVBAT(MAX) = 1.30μH,
Application Information (Cont.)



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