ESH3DFSH

Taiwan Semiconductor

2

Version: B2103

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-lead thermal resistance

RӨJL

12

°C/W

Junction-to-ambient thermal resistance

RӨJA

65

°C/W

Junction-to-case thermal resistance

RӨJC

11

°C/W

Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage

(1)

IF = 1.5A, TJ = 25°C

VF

0.83

-

V

IF = 3.0A, TJ = 25°C

0.85

0.95

V

IF = 1.5A, TJ = 125°C

0.66

-

V

IF = 3.0A, TJ = 125°C

0.74

0.85

V

Reverse current @ rated VR

(2)

TJ = 25°C

IR

-

5

µA

TJ = 125°C

-

60

µA

Junction capacitance

1MHz, VR = 4.0V

CJ

42

-

pF

Reverse recovery time

IF=0.5A , IR=1.0A

Irr=0.25A

trr

-

25

ns

Notes:

1.

Pulse test with PW = 0.3ms

2.

Pulse test with PW = 30ms

ORDERING INFORMATION

ORDERING CODE

PACKAGE

PACKING

ESH3DFSH

SOD-128

14,000 / Tape & Reel