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STTH6006W 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH6006W
功能描述  Turbo 2 ultrafast - high voltage rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH6006W 数据表(HTML) 3 Page - STMicroelectronics

  STTH6006W Datasheet HTML 1Page - STMicroelectronics STTH6006W Datasheet HTML 2Page - STMicroelectronics STTH6006W Datasheet HTML 3Page - STMicroelectronics STTH6006W Datasheet HTML 4Page - STMicroelectronics STTH6006W Datasheet HTML 5Page - STMicroelectronics STTH6006W Datasheet HTML 6Page - STMicroelectronics STTH6006W Datasheet HTML 7Page - STMicroelectronics  
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STTH6006W
Characteristics
3/7
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
P
(W)
F(AV)
I
(A)
F(AV)
T
δ=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
0
20
40
60
80
100
120
140
160
180
200
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
(A)
FM
V
(V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
0
5
10
15
20
25
30
35
40
45
50
0
50
100
150
200
250
300
350
400
450
500
I
(A)
RM
dI /dt(A/µs)
F
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
V =400V
T =125°C
R
j
Figure 5.
Reverse recovery time versus
dIF/dt (typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
t (ns)
rr
dI /dt(A/µs)
F
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125°C
R
j
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
0
50
100
150
200
250
300
350
400
450
500
Q (nC)
rr
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F



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