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STS7PF30L 数据表(PDF) 4 Page - STMicroelectronics |
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STS7PF30L 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 11 page ![]() 2 Electrical characteristics STS7PF30L 4/11 Table 6. Source-Drain Diode (1) Pulse with limited by safe operating area (2) When mounted on 1inch² FR-4 board (t ≤ 10µs) (3) Pulsed: pulse duration = 300µs, duty cycle 1.5% Note: For the P-CHANNEL MOSFET the polarity of voltages and current have to be reversed Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Note 1 Source-Drain Current Source-Drain Current (pulsed) 7 28 A A VSD Forward On Voltage ISD = 7A, VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7A, di/dt = 100A/µs VDD = 15V, Tj = 150°C (see Figure 15) 40 46 2.3 ns nC A |
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