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M93C86-RBN3P/W 数据表(PDF) 26 Page - STMicroelectronics

部件名 M93C86-RBN3P/W
功能描述  16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE짰 serial access EEPROM
PDF  38 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M93C86-RBN3P/W 数据表(HTML) 26 Page - STMicroelectronics

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DC and AC parameters
M93C86, M93C76, M93C66, M93C56, M93C46
26/38
tSLQZ
tDF
Chip Select low to output Hi-Z
100
ns
tCHQL
tPD0
Delay to output low
200
ns
tCHQV
tPD1
Delay to output valid
200
ns
tW
tWP
Erase or Write cycle time
5
ms
1.
Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.
2.
tCHCL + tCLCH ≥ 1 / fC.
Table 22.
AC characteristics (M93Cx6-W, device grade 3)
Test conditions specified in Table 13. and Table 10.
Symbol
Alt.
Parameter
Min.
Max.
Unit
fC
fSK
Clock frequency
D.C.
2
MHz
tSLCH
Chip Select low to Clock high
50
ns
tSHCH
tCSS
Chip Select set-up time
50
ns
tSLSH
(1)
1.
Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.
tCS
Chip Select low to Chip Select high
200
ns
tCHCL
(2)
2.
tCHCL + tCLCH ≥ 1 / fC.
tSKH
Clock high time
200
ns
tCLCH
(2)
tSKL
Clock low time
200
ns
tDVCH
tDIS
Data in set-up time
50
ns
tCHDX
tDIH
Data in hold time
50
ns
tCLSH
tSKS
Clock set-up time (relative to S)
50
ns
tCLSL
tCSH
Chip Select hold time
0
ns
tSHQV
tSV
Chip Select to READY/BUSY status
200
ns
tSLQZ
tDF
Chip Select low to output Hi-Z
100
ns
tCHQL
tPD0
Delay to output low
200
ns
tCHQV
tPD1
Delay to output valid
200
ns
tW
tWP
Erase or Write cycle time
5
ms
Table 21.
AC characteristics (M93Cx6-W, device grade 6)
Test conditions specified in Table 13. and Table 10.
Symbol
Alt.
Parameter
Min.
Max.
Unit



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