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BUV48A 数据表(PDF) 3 Page - STMicroelectronics |
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BUV48A 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() BUV48A Electrical characteristics 3/8 2 Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 1000 V VCE = 1000 V Tc = 125°C 200 2 µA mA ICER Collector cut-off current (RBE = 10Ω) VCE = 1000 V VCE = 1000 V Tc = 125°C 500 4 µA mA IEBO Emitter cut-off current (IC = 0) VEB = 5V 1mA VCEO(sus) (1) 1. Pulsed duration = 300 ms, duty cycle ≤2%. Collector-emitter sustaining voltage (IB = 0) IC = 200mA 450 V VEBO Emitter-base voltage (IC = 0) IE = 50mA 730 V VCE(sat) (1) Collector-emitter saturation voltage IC = 8A IB = 1.6A IC = 12A IB = 2.4A 1.5 5 V V VBE(sat) (1) Base-emitter saturation voltage IC = 8A IB = 1.6A 1.6 V ton ts tf Resistive load Turn-on time Storage time Fall time VCC = 150V IC = 8A IB1 = -IB2 = 1.6A 1 3 0.8 µs µs µs ts tf Inductive load Storage time Fall time VCC = 300 V IC = 8A VBE = -5V IB1 = 1.6A LB = 3µH 3 0.13 µs µs ts tf Inductive load Storage time Fall time VCC = 300 V IC = 8A VBE = -5V IB1 = 1.6A LB = 3µH TC = 125 oC 5 0.4 µs µs |
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