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RHFL4913 数据表(PDF) 10 Page - STMicroelectronics |
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RHFL4913 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 16 page ![]() DIE Information RHFL4913 ADJUSTABLE VERSION 10/16 6.1 Die bonding pad locations and electrical functions. Die physical dimensions. Die size: 150mils x 110mils (3.81mm by 2.79mm) Die thickness: 375µm ± 25µm (14.8 mils ± 1 mil) Pad size: VIN, VOUT pads: 450µm x 330µm (17.7mils by 13mils) Control pads: 184µm x 184µm (7.25mils square) Interface materials. Top metallization: Al/Si/Cu, 1.05µm ± 0.15µm Backside metallization: None Glassivation. Type: P. Vapox + Nitride Thickness: 0.6µm ± 0.1µm + 0.6µm ± 0.08µm Substrate: bare Silicon Assembly related information. Substrate potential: Floating recommended to be tied to Ground Special assembly instructions: "Sense" pad not used, not internally connected to any part of the IC. Can be connected to Ground when space anti-static electricity rules apply. |
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