HAT2129H datasheet(2/8 Pages) RENESAS

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HAT2129H

Rev.5.00 Sep 20, 2005 page 2 of 7

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±20

—

IG = ±100

µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

—

µA

VDS = 40 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

3.5

VDS = 10 V, I D = 1 mA

RDS(on)

—

6.0

7.5

Ω

ID = 15 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

7.0

9.5

Ω

ID = 15 A, VGS = 7 V

Note4

Forward transfer admittance

|yfs|

—

ID = 15 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

3200

—

Output capacitance

Coss

—

450

—

Reverse transfer capacitance

Crss

—

260

—

VDS = 10 V, VGS = 0, f = 1 MHz

Total gate charge

—

Gate to source charge

Qgs

—

13.5

—

Gate to drain charge

Qgd

—

7.5

—

VDD = 10 V, VGS = 10 V, ID = 30 A

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

VGS = 10 V, ID = 15 A,

VDD

≅ 10 V, RL = 0.67 Ω,

Rg = 4.7

Ω

Body–drain diode forward voltage

VDF

—

0.84

1.10

IF = 30 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

IF = 30 A, VGS = 0

diF/ dt = 50 A/

µs

Notes: 4. Pulse test

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