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STPS40120C 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPS40120C
功能描述  Power Schottky rectifier
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS40120C 数据表(HTML) 3 Page - STMicroelectronics

  STPS40120C Datasheet HTML 1Page - STMicroelectronics STPS40120C Datasheet HTML 2Page - STMicroelectronics STPS40120C Datasheet HTML 3Page - STMicroelectronics STPS40120C Datasheet HTML 4Page - STMicroelectronics STPS40120C Datasheet HTML 5Page - STMicroelectronics STPS40120C Datasheet HTML 6Page - STMicroelectronics STPS40120C Datasheet HTML 7Page - STMicroelectronics STPS40120C Datasheet HTML 8Page - STMicroelectronics  
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STPS40120C
Characteristics
3/8
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
Figure 2.
Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10121416
18202224
P
(W)
F(AV)
T
δ=tp/T
tp
δ = 1
δ = 0.05
I
(A)
F(AV)
δ = 0.5
δ = 0.2
δ = 0.1
0
2
4
6
8
10
12
14
16
18
20
22
0
25
50
75
100
125
150
175
I
(A)
F(AV)
T
δ=tp/T
tp
T
(°C)
amb
R
=15°C/W
th(j-a)
R=R
th(j-a)
th(j-c)
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
0
20
40
60
80
100
120
140
160
180
200
220
240
1.E-03
1.E-02
1.E-01
1.E+00
I (A)
M
IM
t
δ=0.5
T =25°C
c
T =75°C
c
T =125°C
c
t(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse



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