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STPS8H100D 数据表(PDF) 4 Page - STMicroelectronics

部件名 STPS8H100D
功能描述  High voltage power Schottky rectifier
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS8H100D 数据表(HTML) 4 Page - STMicroelectronics

  STPS8H100D Datasheet HTML 1Page - STMicroelectronics STPS8H100D Datasheet HTML 2Page - STMicroelectronics STPS8H100D Datasheet HTML 3Page - STMicroelectronics STPS8H100D Datasheet HTML 4Page - STMicroelectronics STPS8H100D Datasheet HTML 5Page - STMicroelectronics STPS8H100D Datasheet HTML 6Page - STMicroelectronics STPS8H100D Datasheet HTML 7Page - STMicroelectronics STPS8H100D Datasheet HTML 8Page - STMicroelectronics STPS8H100D Datasheet HTML 9Page - STMicroelectronics  
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Characteristics
STPS8H100
4/9
Figure 9.
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAC)
Figure 10.
Reverse leakage current versus
reverse voltage applied (typical
values)
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ=tp/T
=tp/T
tp
tp
0
102030405060708090
100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
5E+3
VR(V)
IR(µA)
Tj=125°C
Tj=25°C
Figure 11.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 12.
Forward voltage drop versus
forward current (maximum values)
Figure 13.
Thermal resistance junction to
ambient versus copper surface
under tab - Epoxy printed circuit
board FR4, ecu = 35 µm (D
2PAK)
1
10
100
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1.0
10.0
50.0
VFM(V)
IFM(A)
Tj=25°C
Tj=125°C
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm²)
Rth(j-a) (°C/W)



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