ISO7221A datasheet(13/25 Pages) TI

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SOIC-8 PACKAGE THERMAL CHARACTERISTICS

100

125

150

175

200

225

250

100

150

200

T -CaseTemperature-°C

at3.6V

CC1,2

at5.5V

CC1,2

DEVICE FUNCTION TABLE

ISO7220A, ISO7220C, ISO7220M

ISO7221A, ISO7221C, ISO7221M

SLLS755F – JULY 2006 – REVISED AUGUST 2007

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Low-K Thermal Resistance(1)

212

θJA

Junction-to-air

High-K Thermal Resistance

122

°C/W

θJB

Junction-to-Board Thermal Resistance

θJC

Junction-to-Case Thermal Resistance

69.1

Device Power Dissipation

ISO722xM

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF,

390

Input a 150 Mbps 50% duty cycle square wave

(1)

Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface mount packages.

Figure 5. SOIC-8

θJC THERMAL DERATING CURVE per IEC 60747-5-2

Table 1. ISO7220x or ISO7221x(1)

INPUT SIDE VCC

OUTPUT SIDE VCC

INPUT IN

OUTPUT OUT

Open

(1)

PU = Powered Up(Vcc

≥ 3.0V); PD = Powered Down (Vcc ≤ 2.5V); X = Irrelevant; H = High Level;

L = Low Level

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