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4435 数据表(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

部件名 4435
功能描述  P-Channel 30-V (D-S) MOSFET
PDF  5 Pages
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制造商  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
网页  http://www.sztuofeng.com/?lang=en
标志 TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4435 数据表(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4435 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4435 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4435 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4435 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4435 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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4435
2
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1
−2.2
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −24 V, VGS = 0 V
−100
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS = −5 V, VGS = −10 V
−40
A
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −8.0 A
0.015
0.020
W
Drain-Source On-State Resistancea
rDS(on)
VGS = −4.5 V, ID = −5.0 A
0.025
0.030
W
Forward Transconductancea
gfs
VDS = −10 V, ID = −9.1 A
24
S
Diode Forward Voltagea
VSD
IS = −3.0 A, VGS = 0 V
−0.8
−1.28
V
Dynamicb
Total Gate Charge
Qg
33
70
Gate-Source Charge
Qgs
VDS = −15 V, VGS = −10 V, ID = −9.1 A
5.8
nC
Gate-Drain Charge
Qgd
8.6
Turn-On Delay Time
td(on)
10
15
Rise Time
tr
VDD = −15 V, RL = 15 W
15
25
Turn-Off Delay Time
td(off)
VDD = −15 V, RL = 15 W
ID ^ −1 A, VGEN = −10 V, RG = 6 W
110
170
ns
Fall Time
tf
70
110
Source-Drain Reverse Recovery Time
trr
IF = −2.1 A, di/dt = 100 A/ms
60
90
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
0
1234
5
VGS = 10 thru 6 V
TC = −55_C
125_C
25_C
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
3 V
4 V
5 V
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
nA



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