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STP22NF03L 数据表(PDF) 3 Page - STMicroelectronics |
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STP22NF03L 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STP22NF03L Electrical ratings 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDGR Drain-gate voltage (RGS = 20 kΩ)30 V VGS Gate- source voltage ± 15 V ID Drain current (continuous) at TC = 25°C 22 A ID (1) Drain current (continuous) at TC = 100°C 16 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 88 A Ptot Total dissipation at TC = 25°C 45 W Derating factor 0.3 W/°C dv/dt(2) 2. ISD ≤22A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 6 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 11A, VDD = 15V Single pulse avalanche energy 200 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 3.33 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
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