Parameter

Symbol

IRF7809A V

Units

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

±12

Continuous Drain or Source

T

I

D

13.3

Current (V

T

14.6

A

Pulsed Drain Current



I

DM

100

Power Dissipation

T

P

D

2.5

W

T

3.0

Junction & Storage Temperature Range

T

–55 to 150

°C

Continuous Source Current (Body Diode)

I

S

2.5

A

Pulsed Source Current



I

SM

50

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

The IRF7809AV has been optimized for all parameters

that are critical in synchronous buck converters including

R

The IRF7809AV offers particulary low R

Cdv/dt immunity for synchronous FET applications.

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical

PCB mount application.

Absolute Maximum Ratings

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

R

θJA

50

°C/W

Maximum Junction-to-Lead

R

θJL

20

°C/W

Thermal Resistance

Top View

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

IRF7809AVPbF

SO-8

08/23/05

IRF7809AV

R

7.0m

Ω

Q

G

41nC

Q

sw

14nC

Q

oss

30nC

DEVICE CHARACTERISTICS

…

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

applications

• 100% Tested for Rg

• Lead-Free

PD - 95212A