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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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IRFS820 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFS820 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor IRFS820 www.iscsemi.com 1 FEATURES · Drain Current -ID= 2.0A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pulse 10 A PD Total Dissipation @TC=25℃ 30 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.16 ℃ /W 12 3 TO-220F package Pin 1.Gate 2.Drain 3.Source |
类似零件编号 - IRFS820 |
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类似说明 - IRFS820 |
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