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STPS2L40 数据表(PDF) 4 Page - STMicroelectronics |
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STPS2L40 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STPS2L40 4/8 Figure 9. Relative variation of thermal impedance junction to lead versus pulse duration - SMB flat Figure 10. Reverse leakage current versus reverse voltage applied (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z/R th(j-l) th(j-l) SMB flat T δ=tp/T tp t (s) p Single pulse I (mA) R 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 5 10 15 20 25 30 35 40 T j=125°C T j=25°C V (V) R Figure 11. Junction capacitance versus reverse voltage applied (typical values) Figure 12. Forward voltage drop versus forward current (high level) Figure 13. Forward voltage drop versus forward current (low level) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed board FR4, eCU=35µm) 10 100 1000 1 10 100 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0.1 1.0 10.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 I (A) FM V (V) FM T =25°C (maximum values) j T =125°C (maxmimum values) j T =125°C (typical values) j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 I (A) FM V (V) FM T =25°C (maximum values) j T =125°C (maxmimum values) j T =125°C (typical values) j 0 10 20 30 40 50 60 70 80 90 100 110 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 S (cm²) CU SMB flat SMB R (°C/W) th(j-a) |
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