DS

V = -25V, I = -0.1A

DS

GS

V = ±20V, V = 0V

Electrical Characteristics - P-CHANNEL - Q , BSS84

Parameter

Symbol

Min

Units

Drain-Source Breakdown Voltage

T = 25°C Unless otherwise noted

Conditions

Typ

Max

I = -250µA, V = 0V

Zero Gate Voltage Drain Current

V = -50V, V = 0V, T =25°C

DS

Gate-Body Leakage

-50

-

-

V

-

-

-15

-

-

-60

µA

-

±10

nA

-

-0.1

--

OFF CHARACTERISTICS (Note 3)

DS

DS

V = -50V, V = 0V, T =125°C

V = -25V, V = 0V, T =25°C

GS

GS

GS

J

J

J

J

D

Parameter

Symbol

Min

Units

Gate Threshold Voltage

Conditions

Typ

Max

V = V , I = -1mA

Forward Transconductance

-0.8

1.44

-2.0

V

ON CHARACTERISTICS (Note 3)

GS

D

0.05

-

-

S

V = -5V, I = -0.1A

-

3.8

10

Ohms

D

Parameter

Symbol

Min

Units

Input Capacitance

Conditions

Typ

Max

Reverse Transfer Capacitance

-

-

45

pF

DYNAMIC CHARACTERISTICS

-

-12

pF

Output Capacitance

DS

V = -25V,

V = 0V,

f = 1.0MHz

-

-

25

pF

GS

Parameter

Symbol

Min

Units

Turn-On Delay Time

Conditions

Typ

Max

-

7.5

-

ns

SWITCHING CHARACTERISTICS

Turn-Off Delay Time

-

25

-

ns

V = -30V, I = -0.27A,

R

= 50ohm, V = -10V

DD

D

GEN

GS

Note 3. Short duration test pulse used to minimize self-heating

GS

BSS8402DW

2

www.panjit.com

9/15/2005

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