BSS8402DWTSLASHR13-R datasheet(3/6 Pages) PANJIT

3 / 6 page

V = -25V, I = -0.1A

V = ±20V, V = 0V

Electrical Characteristics - P-CHANNEL - Q , BSS84

Parameter

Symbol

Min

Units

Drain-Source Breakdown Voltage

T = 25°C Unless otherwise noted

Conditions

Typ

Max

BVDSS D

I = -250µA, V = 0V

Zero Gate Voltage Drain Current

I DSS

V = -50V, V = 0V, T =25°C

Gate-Body Leakage

-50

-15

-60

µA

±10

-0.1

OFF CHARACTERISTICS (Note 3)

I GSS

V = -50V, V = 0V, T =125°C

V = -25V, V = 0V, T =25°C

Parameter

Symbol

Min

Units

Gate Threshold Voltage

Conditions

Typ

Max

VGS(th) DS

V = V , I = -1mA

Forward Transconductance

-0.8

1.44

-2.0

ON CHARACTERISTICS (Note 3)

g FS

0.05

Static Drain-Source On-ResistanceRDS(ON) GS

V = -5V, I = -0.1A

3.8

Ohms

Parameter

Symbol

Min

Units

Input Capacitance

Conditions

Typ

Max

Ciss

Reverse Transfer Capacitance

DYNAMIC CHARACTERISTICS

Crss

-12

Output Capacitance

Coss

V = -25V,

V = 0V,

f = 1.0MHz

Parameter

Symbol

Min

Units

Turn-On Delay Time

Conditions

Typ

Max

t D(ON)

7.5

SWITCHING CHARACTERISTICS

Turn-Off Delay Time

t D(OFF)

V = -30V, I = -0.27A,

= 50ohm, V = -10V

GEN

Note 3. Short duration test pulse used to minimize self-heating

BSS8402DW

www.panjit.com

9/15/2005

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