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G800P06LL 数据表(PDF) 4 Page - Goford Semiconductor |
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G800P06LL 数据表(HTML) 4 Page - Goford Semiconductor |
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4 / 6 page ![]() G800P06LL www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 3.Drain Source On Resistance Figure 4. Gate Charge Figure 5. Capacitance Figure 6. Source-Drain Diode Forward -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics -VDS Drain-Source Voltage(V) -VSD, Source-to-Drain Voltage (V) -ID-Drain Current (A) Qg Gate Charge(nC) VGS=-10V VGS=-4.5V 0 1 2 3 4 5 0 3 6 9 12 15 VDD = -30V ID = -3.1A |
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