STTH8006 datasheet(2/6 Pages) STMICROELECTRONICS

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Characteristics

STTH8006

2/6

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.98 x IF(AV) + 0.004 IF

(RMS)

Table 2.

Thermal resistance

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

0.75

°C/W

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

160

1600

(2)

Forward voltage drop

Tj = 25 °C

IF = 80 A

1.60

Tj = 150 °C

1.02

1.30

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Table 4.

Dynamic characterstics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5 A Irr = 0.25 A IR =1 A

IF = 1 A dIF/dt = 50 A/µs VR =30 V

105

IRM

Reverse recovery

current

Tj = 125°C

IF = 80 A

VR = 400 V

dIF/dt = 100 A/µs

tfr

Forward recovery

time

Tj = 25°C

IF = 80 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

600

VFP

Forward recovery

voltage

Tj = 25°C

IF = 80 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

3.7

Figure 1.

Conduction losses versus average

forward current

Figure 2.

Forward voltage drop versus

forward current

P(W)

100

120

140

1020

3040

5060

7080

100

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

(A)

F(AV)

(A)

100

120

140

160

180

200

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

j=25°C

(Maximum values)

j=150°C

(Maximum values)

j=150°C

(Maximum values)

j=150°C

(Typical values)

j=150°C

(Typical values)

(V)

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