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CSD3160H 数据表(PDF) 3 Page - Powerex Power Semiconductors |
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CSD3160H 数据表(HTML) 3 Page - Powerex Power Semiconductors |
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3 / 4 page ![]() S-7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CSD3120H, CSD3160H Single SCR POW-R-BLOK™ Modules 400 Amperes/1200-1600 Volts Electrical and Thermal Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions CSD3120H/CSD3160H Units Blocking State Maximums Forward Leakage Current, Peak IDRM Tj = 125°C, VDRM = Rated 40 mA Reverse Leakage Current, Peak IRRM Tj = 125°C, VRRM = Rated 40 mA Conducting State Maximums Peak On-State Voltage VFM ITM = 1200A 1.4 Volts Switching Minimums Critical Rate-Of-Rise of Off-State Voltage dv/dt Tj = 125°C, VD = 2/3 VDRM 500 Volts/ s Thermal Maximums Thermal Resistance, Junction-to-Case R (J-C) Per Module 0.1 °C/Watt Thermal Resistance, Case-to-Sink (Lubricated) R (C-S) Per Module 0.08 °C/Watt Gate Parameters Maximums Gate Current to Trigger IGT VD = 6V, RL = 2Ω 100 mA Gate Voltage to Trigger VGT VD = 6V, RL = 2Ω 3.0 Volts Non-Triggering Gate Voltage VGDM Tj = 125°C, VD = 1/2 VDRM 0.25 Volts |
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