Page 4 of 5

www.siliconsupplies.com

Advanced CMOS TTL Input – 74ACT38

Rev 1.0

18/01/21

DC Electrical Characteristics Continued (Voltages referenced to GND)

LIMITS

PARAMETER

SYMBOL

VCC

CONDITIONS

25°C

85°C

FULL RANGE

4

UNITS

4.5V

4.4

4.4

4.4

5.5V

IOUT = -50µA

5.4

5.4

5.4

V

4.5V

3.86

3.76

3.76

5.5V

VIN = VIL or VIH

5

IOL = -24mA

4.86

4.76

4.76

V

4.5V

-

-

-

Minimum High-Level

Output Voltage

VOH

5.5V

VIN = VIL or VIH

5,6

IOL = -50mA

-

-

-

V

Maximum Input

Leakage Current

IIN

5.5V

VIN = VCC or GND

±0.1

±1.0

±1.0

µA

Maximum 3-State

leakage current

IOZ

5.5

VOUT=VCC or GND,

VIN = VIL or VIH

±0.5

±2.5

±2.5

µA

Additional Maximum

ICC / Input

ΔICCT

5.5V

VIN = VCC -2.1V

0.6

1.5

1.5

mA

IOLD

5.5V

VOLD = 1.65V Max

-

75

75

Minimum Dynamic

Output Current

7

IOHD

5.5V

VOHD = 3.86V Min

-

-75

-75

mA

Maximum Quiescent

Supply Leakage

Current

ICC

5.5V

VIN = VCC or GND

IOUT = 0µA

4

40

40

µA

AC Electrical Characteristics8

8. Not production tested in die form, characterized by chip design.

9. Used to determine the no-load dynamic power consumption: PD = CPD VCC

2f + ICC VCC.

LIMITS

PARAMETER

SYMBOL

VCC

CONDITIONS

25°C

85°C

FULL RANGE

4

UNITS

tPLH,

6

7

7

Maximum

Propagation Delay,

A or B to Y

tPHL

5V ±10%

GND = 0V,

CL = 50pF,

RL = 500Ω,

tr = tf = ≤ 2.5ns

6

7

7

ns

Maximum

Propagation Delay,

OFF-state to Low

tPZL

5.1

6

6

Maximum

Propagation Delay,

Low to OFF-state

tPLZ

5V ±10%

GND = 0V,

CL = 50pF,

RL = 500Ω,

tr = tf = ≤ 2.5ns,

(Figure1)

5.0

5.3

5.3

ns

Maximum Input

Capacitance

CIN

5V ±10%

VIN = VCC or

GND

8

8

8

pF

TYPICAL

Power Dissipation

Capacitance

9

CPD

-

TJ = 25°C,

VCC =5.0V

40

pF

7. Maximum test duration 2ms, one output loaded at a time.