ADR821BRMZ-R21 datasheet(4/20 Pages) AD

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ADR821/ADR827

Rev. 0 | Page 4 of 20

ADR821 ELECTRICAL CHARACTERISTICS—AMPLIFIER (VS = ±2.8 V)

VCM = 0 V, TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Input Offset Voltage

VOS

−40°C < TA < +125°C

100

500

μV

Input Offset Voltage Drift

TCVOS

−40°C < TA < +125°C

μV/°C

Input Bias Current

−40°C < TA < +125°C

Input Offset Bias Current

IOS

−40°C < TA < +125°C

Large Signal Voltage Gain

AVO

VOUT = −1.5 V to +1.5 V

RLOAD = 10 kΩ, −40°C < TA < +125°C

108

RLOAD = 2 kΩ, −40°C < TA < +125°C

100

Common-Mode Rejection Ratio

CMRR

VCM = −1.5 V to +1.5 V, −40°C < TA < +125°C

100

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

ILOAD = 1 mA

2.6

2.7

ILOAD = 1 mA, −40°C < TA < +125°C

2.55

Output Voltage Low

VOL

ILOAD = 1 mA

−2.7

−2.6

ILOAD = 1 mA, −40°C < TA < +125°C

−2.55

POWER SUPPLY

Positive Supply Current

ISY+

No load, −40°C < TA < +125°C

400

μA

Negative Supply Current

ISY−

No load, −40°C < TA < +125°C

300

μA

Power Supply Rejection Ratio

PSRR

VS = ±2.8 V to ±15 V

100

DYNAMIC PERFORMANCE

Slew Rate

RLOAD = 10 kΩ, CLOAD = 10 pF, AV = +1

0.5

V/μs

Gain Bandwidth Product

GBP

CLOAD = 14 pF

1.0

MHz

Phase Margin

φM

CLOAD = 14 pF

72.5

Degrees

NOISE PERFORMANCE

Voltage Noise

eN p-p

f = 0.1 Hz to 10 Hz

0.2

μV p-p

Voltage Noise Density

f = 1 kHz

nV/√Hz

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