STP10NK70Z datasheet(2/13 Pages) STMICROELECTRONICS

2 / 13 page

1 Electrical ratings

STP10NK70Z - STP10NK70ZFP

2/13

Electrical ratings

Table 1.

Absolute maximum ratings

Table 2.

Thermal data

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

VDS

Drain-Source Voltage (VGS = 0)

700

VDGR

Drain-gate Voltage (RGS = 20kΩ)

700

VGS

Gate-Source Voltage

± 30

Drain Current (continuous) at TC = 25°C

8.6

8.6 (Note 3)

Drain Current (continuous) at TC = 100°C

5.4

5.4 (Note 3)

IDM Note 2

Drain Current (pulsed)

34 (Note 3)

PTOT

Total Dissipation at TC = 25°C

150

Derating Factor

1.20

0.28

W/°C

Vesd(G-S)

G-S ESD (HBM C=100pF, R=1.5k

Ω)

4000

dv/dt

Note 1

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Volatge (DC)

2500

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

TO-220FP

Unit

Rthj-case

Thermal Resistance Junction-case Max

0.83

3.6

°C/W

Rthj-amb

Thermal Resistance Junction-amb Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, repetitive or

Not-Repetitive (pulse width limited by Tj max)

8.6

EAS

Single Pulse Avalanche Energy

(starting Tj=25°C, ID=IAR, VDD= 50V)

350

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