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3

IRF7811AVPbF

0

5

10

15

20

0

2

4

6

Q , Total Gate Charge (nC)

G

I

=

D

15A

1

10

100

V DS , Drain-to-Source Voltage (V)

0

500

1000

1500

2000

2500

3000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0.1

1

10

100

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V

= 15V

20µs PULSE WIDTH

DS

V

, Gate-to-Source Voltage (V)

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

0.3

0.6

0.9

1.2

1.5

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

Figure 1. Normalized On-Resistance vs. Temperature

Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge

Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage

Figure 4. Typical Capacitance vs. Drain-to-Source Voltage

Figure 5. Typical Transfer Characteristics

Figure 6. Typical Source-Drain Diode Forward Voltage

-60

-40

-20

0

20

40

60

80

100

120

140

160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature

( C)

J

°

V

=

I

=

GS

D

4.5V

15A

V

3.0

6.0

9.0

12.0

15.0

V GS, Gate -to -Source Voltage (V)

0.008

0.010

0.012

0.014

0.016

0.018

0.020

ID = 15A