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FS1AS-18A 数据表(PDF) 2 Page - Powerex Power Semiconductors

部件名 FS1AS-18A
功能描述  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

FS1AS-18A 数据表(HTML) 2 Page - Powerex Power Semiconductors

  FS1AS-18A Datasheet HTML 1Page - Powerex Power Semiconductors FS1AS-18A Datasheet HTML 2Page - Powerex Power Semiconductors FS1AS-18A Datasheet HTML 3Page - Powerex Power Semiconductors FS1AS-18A Datasheet HTML 4Page - Powerex Power Semiconductors  
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Feb.1999
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
900
±30
—
—
2
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
3
11.5
5.75
1.0
270
26
4
9
12
35
30
1.0
—
—
—
±10
1
4
15.0
7.50
—
—
—
—
—
—
—
—
1.5
2.27
ID = 1mA, VGS = 0V
IGS = ±100
µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 0.5A, VGS = 10V,
RGEN = RGS = 50
Ω
IS = 0.5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS1AS-18A
HIGH-SPEED SWITCHING USE
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
10–2
10–1
2
3
5
7
100
2
3
5
7
100 2101
35 7
2
102
35 7
2
103
35 7
3
2
101
5
7
tw = 100
ms
TC = 25°C
Single Pulse
10ms
100ms
1ms
DC
0
0.4
0.8
1.2
1.6
2.0
0
1020304050
PD = 55W
VGS = 20V
TC = 25°C
Pulse Test
10V
5V
4V
4.5V
0
20
40
60
80
100
0
200
50
100
150
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
VGS = 20V @
TC = 25°C
Pulse Test
10V
5V
4.5V
4V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES



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