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FS2AS-3 数据表(PDF) 2 Page - Powerex Power Semiconductors

部件名 FS2AS-3
功能描述  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

FS2AS-3 数据表(HTML) 2 Page - Powerex Power Semiconductors

  FS2AS-3 Datasheet HTML 1Page - Powerex Power Semiconductors FS2AS-3 Datasheet HTML 2Page - Powerex Power Semiconductors FS2AS-3 Datasheet HTML 3Page - Powerex Power Semiconductors FS2AS-3 Datasheet HTML 4Page - Powerex Power Semiconductors  
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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2AS-3
HIGH-SPEED SWITCHING USE
0
8
16
24
32
40
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
10–1
2
3
5
7
100
2
3
5
7
101
2
3
5
7
2101
35 7
2
102
35 7
2
103
35 7
2
2
tw = 10
ms
TC = 25°C
Single Pulse
100
ms
10ms
1ms
DC
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
VGS = 20V 10V 8V
5V
6V
PD = 20W
TC = 25°C
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
VGS = 20V
6V
5V
4V
10V
TC = 25°C
Pulse Test
PERFORMANCE CURVES
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
150
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
0.59
0.59
3.0
280
60
14
16
8
19
7
1.0
—
65
—
±0.1
0.1
4.0
0.80
0.80
—
—
—
—
—
—
—
—
1.5
6.25
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
ID = 1mA, VGS = 0V
VGS =
±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50
Ω
IS = 1A, VGS = 0V
Channel to case
IS = 2A, dis/dt = –100A/
µs



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