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LP55271TL 数据表(PDF) 4 Page - National Semiconductor (TI) |
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LP55271TL 数据表(HTML) 4 Page - National Semiconductor (TI) |
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4 / 21 page ![]() Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Voltage on power pins (V DD1,2) -0.3V to +6.0V Voltage on analog pins -0.3V to V DD1,2+0.3V with 6.0V max Voltage on input/output pins -0.3V to V DD1,2+0.3V with 6.0V max V(all other pins): Voltage to GND -0.3V to 6.0V I(V REF)10 µA I(FLASH) 500 mA Continuous Power Dissipation (Note 3) Internally Limited Junction Temperature (T J-MAX) 125oC Storage Temperature Range -65oC to +150oC Maximum Lead Temperature (Reflow soldering, 3 times) (Note 4) 260oC ESD Rating (Note 5) Human Body Model 2 kV Operating Ratings (Note 1), (Note 2) Voltage on power pins (V DD1,2) 3.0 to 5.5V Voltage on ASE1, ASE2 0V to 1.6V V DD_IO 1.65V to V DD1 Junction Temperature (T J) Range -30oC to +125oC Ambient Temperature (T A) Range (Note 6) -30oCto+85oC Thermal Properties Junction-to-Ambient Thermal Resistance ( θ JA), TLA3011A Package (Note 7) 60 - 100oC/W Electrical Characteristics (Notes 2, 8) Limits in standard typeface are for T J =25 oC. Limits in boldface type apply over the operating ambient temperature range (-30oC < T A < +85 oC). Unless otherwise noted, specifications apply to the LP55271 Block Diagram with: V IN = 3.6V, CIN = 10 µF, C OUT1 = 10 µF, COUT2 = 10 µF, CVDD_IO = 100 nF, CVREF = 100 nF, CVDDA = 4.7 µF, CVDD1 = 100 nF, CVDD2 = 100 nF, L 1 = 4.7 µH. (Note 9) Symbol Parameter Condition Min Typ Max Units I SHUT DOWN Current of V DD1 +VDD2 pins + Leakage Current of SW1, SW2, LED1 to 4 and FLASH Voltage on V DD_IO = 0V, NRST = L, NSTBY(bit) = L 1 5 µA I DD Active Mode Supply Current (V DD1 +VDD2 current) NRST = H, NSTBY(bit) = H, no load, EN_BOOST(bit) = L, SCL, SDA = H 350 µA I DD No load supply current (V DD1 +VDD2 current) NSTBY(bit) = H, EN_BOOST(bit) = H, SCL, SDA, NRST = H, AUTOLOAD_EN(bit) = L 850 µA I VDDIO V DD_IO Standby Supply current NSTBY(bit) = L 1 µA V DDA I VDDA =1mA -4% 2,8V +4% V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: All voltages are with respect to the potential at the GND pins. Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 160 oC (typ.) and disengages at TJ = 140oC (typ.). Note 4: For detailed soldering specifications and information, please refer to National Semiconductor Application Note AN1112 : Micro SMD Wafer Level Chip Scale Package. Note 5: The Human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. MIL-STD-883 3015.7 Note 6: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125 oC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX =TJ-MAX-OP –(θJA xPD-MAX). Note 7: Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design. Note 8: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Note 9: Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics. www.national.com 4 |
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