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FS30AS-06 数据表(PDF) 2 Page - Powerex Power Semiconductors

部件名 FS30AS-06
功能描述  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

FS30AS-06 数据表(HTML) 2 Page - Powerex Power Semiconductors

  FS30AS-06 Datasheet HTML 1Page - Powerex Power Semiconductors FS30AS-06 Datasheet HTML 2Page - Powerex Power Semiconductors FS30AS-06 Datasheet HTML 3Page - Powerex Power Semiconductors FS30AS-06 Datasheet HTML 4Page - Powerex Power Semiconductors  
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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
100
3
5
7
101
2
3
5
7
102
2
3
2
3
5
7
100
57
2
101
35 7
2
102
35 7
3
3
2
tw = 10
ms
TC = 25°C
Single Pulse
100
ms
10ms
1ms
DC
0
10
20
30
40
50
02468
10
VGS = 20V
6V
4V
5V
TC = 25°C
Pulse Test
10V
PD = 35W
0
6
12
18
24
30
012345
4V
5V
6V
TC = 25°C
Pulse Test
VGS = 20V
10V
PD = 35W
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
m
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
60
—
—
2.0
—
—
14
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
23
0.345
20
1250
310
150
20
50
60
60
1.0
—
65
—
±0.1
0.1
4.0
30
0.450
—
—
—
—
—
—
—
—
1.5
3.57
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
ID = 1mA, VGS = 0V
VGS =
±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 10V
ID = 15A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50
Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/
µs
PERFORMANCE CURVES



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