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GD50FSX65L2SF 数据表(PDF) 3 Page - StarPower Europe AG

部件名 GD50FSX65L2SF
功能描述  650V/50A 6 in one-package
PDF  9 Pages
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制造商  STARPOWER [StarPower Europe AG]
网页  www.starpowereurope.com
标志 STARPOWER - StarPower Europe AG

GD50FSX65L2SF 数据表(HTML) 3 Page - StarPower Europe AG

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GD50FSX65L2SF
IGBT Module
©2018 STARPOWER Semiconductor Ltd.
12/29/2018
3/9
Preliminary
IGBT Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=50A,VGE=15V,
Tj=25
oC
1.45
1.90
V
IC=50A,VGE=15V,
Tj=125
oC
1.60
IC=50A,VGE=15V,
Tj=150
oC
1.70
VGE(th)
Gate-Emitter Threshold
Voltage
IC=0.80mA,VCE=VGE,
Tj=25
oC
5.1
5.8
6.5
V
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
1.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
0
Ω
Cies
Input Capacitance
VCE=25V,f=1MHz,
VGE=0V
5.80
nF
Cres
Reverse Transfer
Capacitance
0.11
nF
QG
Gate Charge
VGE=-15…+15V
0.35
uC
td(on)
Turn-On Delay Time
VCC=300V,IC=50A,
RG=6.8
Ω,V
GE=±15V,
Tj=25
oC
18
ns
tr
Rise Time
15
ns
td(off)
Turn-Off Delay Time
136
ns
tf
Fall Time
24
ns
Eon
Turn-On Switching
Loss
0.32
mJ
Eoff
Turn-Off Switching
Loss
0.96
mJ
td(on)
Turn-On Delay Time
VCC=300V,IC=50A,
RG=6.8
Ω,V
GE=±15V,
Tj=125
oC
18
ns
tr
Rise Time
18
ns
td(off)
Turn-Off Delay Time
152
ns
tf
Fall Time
32
ns
Eon
Turn-On Switching
Loss
0.46
mJ
Eoff
Turn-Off Switching
Loss
1.28
mJ
td(on)
Turn-On Delay Time
VCC=300V,IC=50A,
RG=6.8
Ω,V
GE=±15V,
Tj=150
oC
18
ns
tr
Rise Time
18
ns
td(off)
Turn-Off Delay Time
160
ns
tf
Fall Time
40
ns
Eon
Turn-On Switching
Loss
0.51
mJ
Eoff
Turn-Off Switching
Loss
1.36
mJ
ISC
SC Data
tP
≤6μs,V
GE=15V,
Tj=150
oC,V
CC=300V,
VCEM
≤600V
250
A



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