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STP7NB60 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP7NB60
功能描述  N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP7NB60 数据表(HTML) 3 Page - STMicroelectronics

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STP7NB60/FP
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 6. Off
Table 7. On (1)
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Table 8. Dynamic
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 mA; VGS = 0
600
V
IDSS
Zero Gate Voltage
VDS = Max Rating
1
µA
Drain Current (VGS = 0)
VDS = Max Rating; Tc = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
± 100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS; ID = 250 µA3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V; ID = 3.6 A
1.0
1.2
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
(1)
Forward
Transconductance
VDS > ID(on) x RDS(on)max; ID = 3.6 A
4
5.3
S
Ciss
Input Capacitance
VDS = 25 V; f = 1 MHz; VGS = 0
1250
1625
pF
Coss
Output Capacitance
165
223
pF
Crss
Reverse Transfer
Capacitance
16
22
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Time
VDD = 300 V; ID = 3.6 A RG = 4.7 Ω
18
27
ns
tr
Rise Time
VGS = 10 V (see test circuit, Figure 18)
8
12
ns
Qg
Total Gate Charge
VDD = 480 V ID = 7.2 A VGS = 10 V
30
45
nC
Qgs
Gate-Source Charge
9.9
nC
Qgd
Gate-Drain Charge
13.3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480 V; ID = 7.2 A; RG = 4.7 Ω
812
ns
tf
Fall Time
VGS = 10 V (see test circuit, Figure 20)
5
8
ns
tc
Cross-over Time
15
23
ns



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