Protection IC Datasheet

© 2024 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: JC. 08/12/24

LS0502SCD33

Super Capacitor Protection IC for Backup Power Applications

3

Absolute Maximum Rating (Reference to GND)

Notes: Stress exceeding those listed “Absolute Maximum Ratings” may damage the device.

Symbol

Value

Units

VCAP, VSYS, PFLTB to GND

-0.3 to +6

V

VIN to GND

-0.3 to +18

V

VMID, CFB to GND

-0.3 to VCAP+0.3

V

PFB, ILIMT, ICHG to GND

-0.3 to VSYS+0.3

V

ESD

Class 2

-

Lead Temperature (Soldering 10 s)

260

°C

Junction Temperature Range

-40 to +150

°C

Storage Temperature Range

-65 to +150

°C

Recommend Operating Conditions

Symbol

Value

Units

Input Voltage (VIN)

+3.3 to +5.5

V

Cap Voltage (VCAP)

+0.8 to +5.5

V

Operating Temperature Range

-40 to +85

°C

Junction Temperature Range

-40 to +125

°C

Notes: The device is not guaranteed to function outside of the recommended operating conditions.

Symbol

Value

Units

Maximum Power Dissipation (T

A = 25 °C )

2.3

W

Thermal Resistance (

θ

JA)

53

°C/W

Thermal Resistance (

θ

JC)

25

°C/W

Notes:

1. Measured on JESD51-7, 4-Layer PCB.

2. The maximum allowable power dissipation is a function of the maximum junction temperature T

J_MAX,

the junction to ambient thermal resistance

θ

JA, and the ambient temperature TA. The maximum allowable

continuous power dissipation at any ambient temperature is calculated by P

D_MAX = (TJ_MAX-TA)/θJA. Exceeding

the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into

thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage.

Thermal information

Parameter

Test Conditions

Min

Typ

Max

Unit

Input Voltage Range

-

3.3

-

5.5

V

VSYS Charging Supply Current

PFB>1.2 V, VIN = 5 V

-

650

-

μA

VSYS Backup Supply Current

PFB = 0, VCAP = 5 V

-

1.5

-

μA

VCAP UVLO Threshold

VCAP falling

1.45

1.65

1.85

V

VCAP UVLO Hysteresis

-

-

200

-

mV

INPUT OVP OCP Switch

Input Overvoltage Protection Threshold voltage

VIN Rising

-

min: 5.6,

max: 6.4

-

V

Input Overvoltage Hysteresis

-

-

0.4

-

V

Input Overcurrent level

R

ILIMT = 25.5 kΩ

-

min: 0.96,

max: 1.44

-

A

Max Input Overcurrent Level

VIN>4.2 V,ILIMT connect to GND

-

3

-

A

Input Overvoltage Switch Rdson

-

-

0.1

-

Ω

Ideal Diode

Drain Source regulation voltage

-

-

25

-

mV

Source Drain fast reverse blocking threshold voltage2

-

-

-20

-

mV

PMOS Rdson

-

-

50

-

mΩ

PMOS Leakage Current

-

-

-

0.1

μA

Electrical Characteristics (T

A = +25 °C, VIN = 5 V, VCAP = 5 V, unless otherwise specified)

1

Notes:

1. Limits are 100 % production testes @ T

A = +25 °C, unless otherwise noted. Limits over the temperature range are guaranteed by design.

2. Guaranteed by design, not production tested.